Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices
Data(s) |
1998
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Resumo |
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage (I-V) characteristic exhibited the feature of negative differential velocity (NDV) and high electric field domain effect at different biases. Under strong magnetic fields, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (C) 1998 Elsevier Science B.V. All rights reserved. Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage (I-V) characteristic exhibited the feature of negative differential velocity (NDV) and high electric field domain effect at different biases. Under strong magnetic fields, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (C) 1998 Elsevier Science B.V. All rights reserved. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:35导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:35Z (GMT). No. of bitstreams: 1 3052.pdf: 273807 bytes, checksum: 15a74ec625893d3857e9a8b57128acae (MD5) Previous issue date: 1998 Vienna Tech Univ, Inst Festkorperelekt, A-1040 Vienna, Austria; Natl Univ Singapore, Dept Elect Engn, Ctr Optoelect, Singapore 119260, Singapore; Acad Sinica, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
Identificador | |
Idioma(s) |
英语 |
Publicador |
ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
Fonte |
Liu J; Gornik E; Xu SJ; Zheng HZ .Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices .见:ELSEVIER SCIENCE BV .MICROELECTRONIC ENGINEERING, 43-4,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,1998,349-354 |
Palavras-Chave | #半导体物理 #GaAs/AlAs #superlattices #transport #tunnelling #Landau level #NEGATIVE DIFFERENTIAL CONDUCTIVITY #LOW-FIELD MOBILITY #SEMICONDUCTOR SUPERLATTICE #TEMPERATURE-DEPENDENCE #CONDUCTANCE #TRANSPORT #LOCALIZATION #MINIBANDS |
Tipo |
会议论文 |