Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy

CMOS/SOS devices have lower carriers mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly results from the defects of heteroepitaxial silicon film, especially from the defects near Si-Sapphire interface. This paper describes the experiment results of CMOS/SOS devices characteristics improved by a better epitaxial silicon quality which is obtained by a modified solid phase epitaxy.

CMOS/SOS devices have lower carriers mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly results from the defects of heteroepitaxial silicon film, especially from the defects near Si-Sapphire interface. This paper describes the experiment results of CMOS/SOS devices characteristics improved by a better epitaxial silicon quality which is obtained by a modified solid phase epitaxy.

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Chinese Inst Electr.; IEEE Electron Devices Soc.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; URSI Commiss D.; IEE, Electr Div, UK.; Korea Inst Telemat & Electr.; IEEE Beijing Sect.; Mat Res Soc.; Natl Nat Sci Fdn China.

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

Chinese Inst Electr.; IEEE Electron Devices Soc.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; URSI Commiss D.; IEE, Electr Div, UK.; Korea Inst Telemat & Electr.; IEEE Beijing Sect.; Mat Res Soc.; Natl Nat Sci Fdn China.