Optimization of InGaAs quantum dots for optoelectronic applications
| Data(s) |
2002
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|---|---|
| Resumo |
Quantum dot infrared photodetectors (QDIP) are in the center of research interest nowadays. However the real QDIP is inferior to those predicted in theory, in which the dot density is much higher than those reported. Through optimizing the growth conditions, we realized the control of high-density quantum dot growth. This will be very useful for future QDIP development. Quantum dot infrared photodetectors (QDIP) are in the center of research interest nowadays. However the real QDIP is inferior to those predicted in theory, in which the dot density is much higher than those reported. Through optimizing the growth conditions, we realized the control of high-density quantum dot growth. This will be very useful for future QDIP development. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:36:44Z (GMT). No. of bitstreams: 1 2864.pdf: 130442 bytes, checksum: 650d82c647aa97860cc92b068351e4c8 (MD5) Previous issue date: 2002 Gen Atom.; PSFC.; IEEE. Chinese Acad Sci, Novel Mat Dept, Inst Semicond, Beijing 100083, Peoples R China Gen Atom.; PSFC.; IEEE. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Duan RF; Wang BQ; Zhu ZP; Zeng YP .Optimization of InGaAs quantum dots for optoelectronic applications .见：IEEE .TWENTY SEVENTH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES, CONFERENCE DIGEST,345 E 47TH ST, NEW YORK, NY 10017 USA ,2002,81-82 |
| Palavras-Chave | #半导体材料 #INFRARED PHOTODETECTORS |
| Tipo |
会议论文 |
