Properties of GaSb substrate wafers for MOCVD III-V antimonids


Autoria(s): 彭瑞伍; 丁永庆; 徐晨梅; 王占国
Data(s)

1998

Identificador

http://ir.semi.ac.cn/handle/172111/19295

http://www.irgrid.ac.cn/handle/1471x/104285

Idioma(s)

英语

Fonte

彭瑞伍;丁永庆;徐晨梅;王占国.Properties of GaSb substrate wafers for MOCVD III-V antimonids,Rare Metals,1998,17(3):161

Palavras-Chave #半导体材料
Tipo

期刊论文