SOI thermo-optic modulator with fast response


Autoria(s): Wang Xiaohong; Liu Jingwei; Yan Qingfeng; Chen Shaowu; Yu Jinzhong
Data(s)

2003

Resumo

Silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functionson a silicon wafer. In this letter, a 1 * 1 multimode interference (MMI) Mach-Zender interferometer(MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has anextinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response timeis less than 30μs.

Silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functionson a silicon wafer. In this letter, a 1 * 1 multimode interference (MMI) Mach-Zender interferometer(MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has anextinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response timeis less than 30μs.

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Research Center for Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences

Identificador

http://ir.semi.ac.cn/handle/172111/17525

http://www.irgrid.ac.cn/handle/1471x/103400

Idioma(s)

英语

Fonte

Wang Xiaohong;Liu Jingwei;Yan Qingfeng;Chen Shaowu;Yu Jinzhong.SOI thermo-optic modulator with fast response,Chinese Optics Letters,2003,1(9):527-528

Palavras-Chave #光电子学
Tipo

期刊论文