INFLUENCES OF ALLOY DISORDER AND INTERFACE ROUGHNESS ON OPTICAL-SPECTRA OF INGAAS/GAAS STRAINED-LAYER QUANTUM-WELLS


Autoria(s): XU QA; XU ZY; ZHENG BZ; XU JZ
Data(s)

1991

Resumo

We present studies of alloy composition and layer thickness dependences of excitonic linewidths in InGaAs/GaAs strained-layer quantum wells grown by MBE, using both photoluminescence and optical absorption. It is observed that linewidths of exciton spectra increase with indium content and well size. Using the virtual crystal approximation, the experimental data are analyzed. The results obtained show that the alloy disorder is the dominant mechanism for line broadening at low temperature. In addition, it is found that the absorption spectra related to light hole transitions have varied from a peak to a step-like structure as temperature increases. This behavior can be understood by the indirect space transitions of light holes.

Identificador

http://ir.semi.ac.cn/handle/172111/14305

http://www.irgrid.ac.cn/handle/1471x/101187

Idioma(s)

英语

Fonte

XU QA; XU ZY; ZHENG BZ; XU JZ.INFLUENCES OF ALLOY DISORDER AND INTERFACE ROUGHNESS ON OPTICAL-SPECTRA OF INGAAS/GAAS STRAINED-LAYER QUANTUM-WELLS,CHINESE PHYSICS,1991,11(2):458-465

Palavras-Chave #半导体物理 #EPITAXIAL MULTILAYERS #DEFECTS #SUPERLATTICES #DISLOCATIONS #DEPENDENCE #THICKNESS
Tipo

期刊论文