THE EFFECT OF PASSIVATION OF BORON DOPANTS BY HYDROGEN IN NANO-CRYSTALLINE AND MICROCRYSTALLINE SILICON FILMS
Data(s) |
1994
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Resumo |
It is well known that the value of room-temperature conductivity sigma(RT) of boron-doped silicon films is one order lower than that of phosphorus-doped silicon films, when they are deposited in an identical plasma-enhanced chemical vapour deposition system. We use surface acoustic wave and secondary-ion mass spectrometry techniques to measure the concentration of total and electrically active boron atoms. It is shown that only 0.7% of the total amount of incorporated boron is electrically active. This is evidence that hydrogen atoms can passivate substitutional B-Si bonds by forming the neutral B-H-Si complex. By irradiating the boron-doped samples with a low-energy electron beam, the neutral B-H-Si complex converts into electrically active B-Si bonds and the conductivity can be increased by about one order of magnitude, up to the same level as that of phosphorus-doped samples. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
JIANG XL; HE YL; ZHU HL.THE EFFECT OF PASSIVATION OF BORON DOPANTS BY HYDROGEN IN NANO-CRYSTALLINE AND MICROCRYSTALLINE SILICON FILMS,JOURNAL OF PHYSICS-CONDENSED MATTER,1994,6(3):713-718 |
Palavras-Chave | #半导体物理 |
Tipo |
期刊论文 |