Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
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2010
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| Resumo |
X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being -0.30 +/- A 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 +/- A 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17T00:54:13Z No. of bitstreams: 1 Measurement of w-InN h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy.pdf: 285468 bytes, checksum: 9930171d3e2a475703b0f6981ff7f68c (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17T00:58:49Z (GMT) No. of bitstreams: 1 Measurement of w-InN h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy.pdf: 285468 bytes, checksum: 9930171d3e2a475703b0f6981ff7f68c (MD5) Made available in DSpace on 2010-08-17T00:58:50Z (GMT). No. of bitstreams: 1 Measurement of w-InN h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy.pdf: 285468 bytes, checksum: 9930171d3e2a475703b0f6981ff7f68c (MD5) Previous issue date: 2010 The authors are grateful to Professor Huanhua Wang and Dr. Tieying Yang of the Institute of High Energy Physics, Chinese Academy of Science. This work was supported by National Science Foundation of China (No. 60776015, 60976008), the Special Funds for Major State Basic Research Project (973 program) of China (No. 2006 CB604907), and the 863 High Technology R&D Program of China (No. 2007AA03Z402,2007AA03Z451). 其它 The authors are grateful to Professor Huanhua Wang and Dr. Tieying Yang of the Institute of High Energy Physics, Chinese Academy of Science. This work was supported by National Science Foundation of China (No. 60776015, 60976008), the Special Funds for Major State Basic Research Project (973 program) of China (No. 2006 CB604907), and the 863 High Technology R&D Program of China (No. 2007AA03Z402,2007AA03Z451). |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Liu JM (Liu J. M.), Liu XL (Liu X. L.), Xu XQ (Xu X. Q.), Wang J (Wang J.), Li CM (Li C. M.), Wei HY (Wei H. Y.), Yang SY (Yang S. Y.), Zhu QS (Zhu Q. S.), Fan YM (Fan Y. M.), Zhang XW (Zhang X. W.), Wang ZG (Wang Z. G.).Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy.NANOSCALE RESEARCH LETTERS,2010,5(8):1340-1343 |
| Palavras-Chave | #半导体材料 #Valence band offset #w-InN/h-BN heterojunction #X-ray photoelectron spectroscopy #Conduction band offset #Valence band offset #NEGATIVE ELECTRON-AFFINITY #INDIUM NITRIDE #WURTZITE GAN #SURFACE #FILM #ALN #TRANSPORT #EMISSION #NAXWO3 #GROWTH |
| Tipo |
期刊论文 |
