Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application

Autoria(s): Zhang Jiayong; Wang Xiaofeng; Wang Xiaodong; Ma Huili; Cheng Kaifang; Fan Zhongchao; Li Yan; Ji An; Yang Fuhua
Data(s)

2010
Resumo

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T01:33:41Z No. of bitstreams: 1 ApplPhysLett_96_213505.pdf: 1153920 bytes, checksum: 69931d8deb797813dd478b5dd0e292c0 (MD5)

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T01:33:41Z No. of bitstreams: 1 ApplPhysLett_96_213505.pdf: 1153920 bytes, checksum: 69931d8deb797813dd478b5dd0e292c0 (MD5)

其它
Identificador

http://ir.semi.ac.cn/handle/172111/11291

http://www.irgrid.ac.cn/handle/1471x/66139
Idioma(s)

中文
Fonte

Zhang Jiayong,Wang Xiaofeng,Wang Xiaodong,Ma Huili,Cheng Kaifang,Fan Zhongchao,Li Yan,Ji An,Yang Fuhua.Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application.Applied Physics Letters ,2010,96(21):213505
Palavras-Chave #微电子学
Tipo

期刊论文
Acesso ao item digital