Electron irradiation-induced defects in InP pre-annealed at high temperature


Autoria(s): Zhao, YW (Zhao, Y. W.); Dong, ZY (Dong, Z. Y.); Deng, AH (Deng, A. H.)
Data(s)

2006

Resumo

Electron irradiation-induced deep level defects have been studied in InP which has undergone high-temperature annealing in phosphorus and iron phosphide ambients, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and phosphorus ambient annealed InP, InP pre-annealed in iron phosphide ambient has a very low concentration of defects. The phenomenon has been explained in terms of a faster recombination of radiation-induced defects in the annealed InP. The radiation-induced defects in the annealed InP have been compared and studied. (c) 2006 Elsevier Ltd. All rights reserved.

Electron irradiation-induced deep level defects have been studied in InP which has undergone high-temperature annealing in phosphorus and iron phosphide ambients, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and phosphorus ambient annealed InP, InP pre-annealed in iron phosphide ambient has a very low concentration of defects. The phenomenon has been explained in terms of a faster recombination of radiation-induced defects in the annealed InP. The radiation-induced defects in the annealed InP have been compared and studied. (c) 2006 Elsevier Ltd. All rights reserved.

zhangdi于2010-03-29批量导入

zhangdi于2010-03-29批量导入

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China; Sichuan Univ, Dept Phys, Chengdu 610065, Peoples R China

Identificador

http://ir.semi.ac.cn/handle/172111/10006

http://www.irgrid.ac.cn/handle/1471x/66004

Idioma(s)

英语

Publicador

ELSEVIER SCI LTD

THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND

Fonte

Zhao, YW (Zhao, Y. W.); Dong, ZY (Dong, Z. Y.); Deng, AH (Deng, A. H.) .Electron irradiation-induced defects in InP pre-annealed at high temperature .见:ELSEVIER SCI LTD .MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND ,FEB-JUN 2006,9 (1-3): 380-383

Palavras-Chave #半导体材料 #indium phosphide
Tipo

会议论文