Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices


Autoria(s): Xu B; Wang ZG; Chen YH; Jin P; Ye XL; Liu HY; Zhang ZY; Shi GX; Zhang CL; Wang YL; Liu FQ
Data(s)

2004

Resumo

Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.

Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.

zhangdi于2010-03-29批量导入

zhangdi于2010-03-29批量导入

IEEE Electron Devices Soc.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; Hakuto Co Ltd.; Shenzhen Oceans King Investment Imp & Exp Co.; Shenzhen Refond Opt ELE Co Ltd.; Jiangsu Nata Optoelect Mat Co Ltd.; Beijing Univ Technol.; Gen Res Inst Nnferrous Mat.; Nanjing Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Zhejiang Univ.

Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

IEEE Electron Devices Soc.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; Hakuto Co Ltd.; Shenzhen Oceans King Investment Imp & Exp Co.; Shenzhen Refond Opt ELE Co Ltd.; Jiangsu Nata Optoelect Mat Co Ltd.; Beijing Univ Technol.; Gen Res Inst Nnferrous Mat.; Nanjing Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Zhejiang Univ.

Identificador

http://ir.semi.ac.cn/handle/172111/9916

http://www.irgrid.ac.cn/handle/1471x/65959

Idioma(s)

英语

Publicador

IEEE

345 E 47TH ST, NEW YORK, NY 10017 USA

Fonte

Xu, B; Wang, ZG; Chen, YH; Jin, P; Ye, XL; Liu, HY; Zhang, ZY; Shi, GX; Zhang, CL; Wang, YL; Liu, FQ .Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices .见:IEEE .SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,113-118

Palavras-Chave #半导体材料 #DOTS
Tipo

会议论文