Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F
| Data(s) |
2005
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| Resumo |
In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve the output performance, the leakage current should be analyzed. In this letter, the temperature dependence of electrical derivative characteristics in AlGaInP/GaInP multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. With the help of secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. The influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (MOCVD) growth. In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve the output performance, the leakage current should be analyzed. In this letter, the temperature dependence of electrical derivative characteristics in AlGaInP/GaInP multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. With the help of secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. The influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (MOCVD) growth. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 SPIE.; Chinese Opt Soc.; China Inst Commun.; Shanghai Jiao Tong Univ.; Alcatel Shanghai Bell.; Shanghai Inst Opt & Fine Mech.; Photon Bridges.; IEEE Commun Soc.; IEEE LEOS.; Opt Soc Amer.; Huawei Technol. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China SPIE.; Chinese Opt Soc.; China Inst Commun.; Shanghai Jiao Tong Univ.; Alcatel Shanghai Bell.; Shanghai Inst Opt & Fine Mech.; Photon Bridges.; IEEE Commun Soc.; IEEE LEOS.; Opt Soc Amer.; Huawei Technol. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Xu, Y; Li, YZ; Song, GF; Gan, QQ; Cao, Q; Guo, L; Chen, LH .Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F .见：SPIE-INT SOC OPTICAL ENGINEERING .Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2005,6020: F202-F202 |
| Palavras-Chave | #光电子学 #AIGaInP laser diodes |
| Tipo |
会议论文 |
