Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes

The mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates were characterized using bulge testing combined with a refined load-deflection model for long rectangular membranes. Plane-strain modulus E-ps, prestress so, and fracture strength s(max) for 3C-SiC thin films with thickness of 0.40 mu m and 1.42 mu m were extracted. The E, values of SiC are strongly dependent on grain orientation. The thicker SIC film presents lower so than the thinner film due to stress relaxation. The s(max) values decrease with increasing film thickness. The statistical analysis of the fracture strength data were achieved by Weibull distribution function and the fracture origins were predicted.

The mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates were characterized using bulge testing combined with a refined load-deflection model for long rectangular membranes. Plane-strain modulus E-ps, prestress so, and fracture strength s(max) for 3C-SiC thin films with thickness of 0.40 mu m and 1.42 mu m were extracted. The E, values of SiC are strongly dependent on grain orientation. The thicker SIC film presents lower so than the thinner film due to stress relaxation. The s(max) values decrease with increasing film thickness. The statistical analysis of the fracture strength data were achieved by Weibull distribution function and the fracture origins were predicted.

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IEEE.; State Key Lab Multi Spectral Informat Proc Technol.; Chinese Soc Micro Nano Technol.; Ctr Micro & Nano Syst.; IEEE Nanotechnol Council.; Shenyang Inst Automat.; Univ California.; UCLA, Ctr Cell Control.; Global Engn Technol Inst.; Nanosurf AG, Smart Instruments Nanosci & Nanotechnol.; US Army Int Technol Ctr, Pacific.

[Zhou, Wei; Yang, Jinling; Sun, Guosheng; Liu, Xingfang; Yang, Fuhua; Li, Jinmin] CAS, Inst Semicond, Beijing 100864, Peoples R China

IEEE.; State Key Lab Multi Spectral Informat Proc Technol.; Chinese Soc Micro Nano Technol.; Ctr Micro & Nano Syst.; IEEE Nanotechnol Council.; Shenyang Inst Automat.; Univ California.; UCLA, Ctr Cell Control.; Global Engn Technol Inst.; Nanosurf AG, Smart Instruments Nanosci & Nanotechnol.; US Army Int Technol Ctr, Pacific.