Pressure behavior of deep centers in ZnSxTe1-x alloys


Autoria(s): Liu NZ; Li GH; Zhang W; Zhu ZM; Han HX; Wang ZP; Ge WK; Sou IK
Data(s)

1999

Resumo

We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pressure up to 7 GPa. The spectra contain only a broad emission band under excitation of the 406.7 nm line. Its pressure coefficients are 47, 62 and 45 meV/GPa for x = 0.98, 0.92 and 0.79 samples, which are about 26%, 7% and 38% smaller than that of the band gap in the corresponding alloys. The Stokes shifts between emission and absorption of the bands were calculated by fitting the pressure dependence of the emission intensity, being 0.29, 0.48 and 0.13 eV for the three samples, respectively. The small pressure coefficient and large Stokes shift indicate that the emission band observed in our samples may correspond to the Te isoelectronic center in the ZnSxTe1-x alloy.

Identificador

http://ir.semi.ac.cn/handle/172111/13006

http://www.irgrid.ac.cn/handle/1471x/65473

Idioma(s)

英语

Fonte

Liu NZ; Li GH; Zhang W; Zhu ZM; Han HX; Wang ZP; Ge WK; Sou IK .Pressure behavior of deep centers in ZnSxTe1-x alloys ,PHYSICA STATUS SOLIDI B-BASIC RESEARCH,1999,211(1):163-169

Palavras-Chave #半导体物理 #ABSORPTION-EDGE #STRAINS #ZNS
Tipo

期刊论文