Numerical analysis of LEC growth of GaAs with an axial magnetic field


Autoria(s): Li MW; Hu WR; Chen NH; Zeng DL; Tang ZM
Data(s)

2002

Resumo

A set of numerical analyses for momentum and heat transfer For a 3 in. (0.075 m) diameter Liquid Encapsulant Czochralski (LEC) growth of single-crystal GaAs with or without all axial magnetic field was carried Out using the finite-element method. The analyses assume a pseudosteady axisymmetric state with laminar floats. Convective and conductive heat transfers. radiative heat transfer between diffuse surfaces and the Navier-Stokes equations for both melt and encapsulant and electric current stream function equations Cor melt and crystal Lire considered together and solved simultaneously. The effect of the thickness of encapsulant. the imposed magnetic field strength as well as the rotation rate of crystal and crucible on the flow and heat transfer were investigated. (C) 2002 Published by Elsevier Science Ltd.

Identificador

http://ir.semi.ac.cn/handle/172111/11892

http://www.irgrid.ac.cn/handle/1471x/64916

Idioma(s)

英语

Fonte

Li MW; Hu WR; Chen NH; Zeng DL; Tang ZM .Numerical analysis of LEC growth of GaAs with an axial magnetic field ,INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER,2002,45 (13):2843-2851

Palavras-Chave #半导体物理 #liquid encapsulant Czochralski (LEC) #growth of GaAs #magnetic field finite-element method #boron oxide #CRYSTAL-GROWTH #HEAT-TRANSFER #CONVECTION #FLOW #SIMULATION #MODEL
Tipo

期刊论文