Study on pollution for the photoelectronic material InP


Autoria(s): Xu JC; Ding XP; Chen DQ
Data(s)

2002

Resumo

The mass spectrum analysis of crystal face (100) and (111) and the photoluminescence analysis of crystal face (100) in the photoelectronic material InP were given. The Hall coefficient, charge carrier concentration and Hall mobility were determined. Experimental results indicate that the pollution of silicon is predominant.

Identificador

http://ir.semi.ac.cn/handle/172111/11798

http://www.irgrid.ac.cn/handle/1471x/64869

Idioma(s)

中文

Fonte

Xu JC; Ding XP; Chen DQ .Study on pollution for the photoelectronic material InP ,SPECTROSCOPY AND SPECTRAL ANALYSIS,2002 ,22 (4):550-551

Palavras-Chave #半导体材料 #mass spectrum analysis #photoluminescence #electron concentration #electron mobility
Tipo

期刊论文