Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique
Data(s) |
2003
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Resumo |
In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 mum. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Feng G; Zhu JJ; Shen XM; Zhang BS; Zhao DG; Wang YT; Yang H; Liang JW .Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique ,SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY,2003 ,46 (4):437-440 |
Palavras-Chave | #半导体物理 #GaN #x-ray diffraction #thickness #SAPPHIRE #GROWTH #FILMS |
Tipo |
期刊论文 |