Fabrication of thermo-optic switch in silicon-on-insulator


Autoria(s): Wang ZT; Xia JS; Fan ZC; Chen SW; Yu JZ
Data(s)

2003

Resumo

Silicon-on-insulator technology has been used to fabricate 2 x 2 thermo-optic switches. The switch shows crosstalk of -23.4 dB and extinction ratio of 18.1 dB in the bar-state. The switching speed is less than 30 mus and the power consumption is about 420 mW The measured excess loss is 1.8 dB. These merits make the switch more attractive for applications in wavelength division multiplexing.

Identificador

http://ir.semi.ac.cn/handle/172111/11376

http://www.irgrid.ac.cn/handle/1471x/64658

Idioma(s)

英语

Fonte

Wang ZT; Xia JS; Fan ZC; Chen SW; Yu JZ .Fabrication of thermo-optic switch in silicon-on-insulator ,CHINESE PHYSICS LETTERS,2003,20 (12):2185-2187

Palavras-Chave #半导体物理 #silicon-on-insulator
Tipo

期刊论文