Analysis of temperature dependence of silicon-on-insulator thermo-optic attenuator


Autoria(s): Li YT (Li Yun-Tao); Yu JZ (Yu Jin-Zhong); Chen YY (Chen Yuan-Yuan); Sun F (Sun Fei); Chen SW (Chen Shao-Wu)
Data(s)

2007

Resumo

The temperature dependence of silicon-on-insulator thermo-optic attenuators is analysed, which originates from the temperature dependence of characteristics of multimode interference. The attenuator depth and power consumption are independent of temperature while the insertion loss depends on the temperature heavily. The variation of the insertion loss decreases from 4.3 dB to 1 dB as the temperature increases from 273 K to 343 K.

Identificador

http://ir.semi.ac.cn/handle/172111/9646

http://www.irgrid.ac.cn/handle/1471x/64235

Idioma(s)

英语

Fonte

Li, YT (Li Yun-Tao); Yu, JZ (Yu Jin-Zhong); Chen, YY (Chen Yuan-Yuan); Sun, F (Sun Fei); Chen, SW (Chen Shao-Wu) .Analysis of temperature dependence of silicon-on-insulator thermo-optic attenuator ,CHINESE PHYSICS LETTERS,FEB 2007,24 (2):465-467

Palavras-Chave #光电子学 #SWITCH
Tipo

期刊论文