An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Gamma point
Data(s) |
2007
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Resumo |
In this paper, an n-type Si1-xGex/Ge (x >= 0.85) quantum cascade (QC) structure utilizing a deep Ge quantum well for electrons at the Gamma point is proposed. Based on linear interpolation, a conduction band offset at the Gamma point in a Si1-xGex/Ge ( x >= 0.85) heterostructure is presented, which is suitable for designing a QC laser. This approach has the advantages of a large conduction band offset at the Gamma point, a low lattice mismatch between the Si1-xGex/Ge ( x >= 0.85) active layers and the Si1-yGey ( y > x) virtual substrate, a small electron effective mass in the Gamma band, simple conduction energy band structures and a simple phonon scattering mechanism in the Ge quantum well. The theory predicts that if high-energy electrons are continuously injected into the Gamma band, a quasi-equilibrium distribution of electrons between the Gamma and L bands can be reached and held, i.e., electrons with a certain density will be kept in the Gamma band. This result is supported by the intervalley scattering experiments. In n-type Si1-xGex/Ge ( x >= 0.85) QC structures, population inversion between the laser's upper and lower levels is demonstrated. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Han, GQ (Han, Genquan); Yu, JZ (Yu, Jinzhong) .An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Gamma point ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,JUL 2007,22 (7):769-773 |
Palavras-Chave | #光电子学 #CASCADE STRUCTURES |
Tipo |
期刊论文 |