A silicon-on-insulator-based thermo-optic waveguide switch with low insertion loss and fast response


Autoria(s): Li YP; Yu JZ; Chen SW
Data(s)

2005

Resumo

A silicon-on-insulator-based thermo-optic waveguide switch integrated with spot size converters is designed and fabricated by inductively coupled plasma reactive ion etching. The device shows good characteristics, including low, insertion loss of 8 +/- 1 dB for wavelength 1530-1580 nm and fast response times of 4.6 As for rising edge and 1.9 mu s for failing edge. The extinction ratios of the two channels are 19.1 and 18 dB, respectively.

Identificador

http://ir.semi.ac.cn/handle/172111/8680

http://www.irgrid.ac.cn/handle/1471x/63870

Idioma(s)

英语

Fonte

Li, YP; Yu, JZ; Chen, SW .A silicon-on-insulator-based thermo-optic waveguide switch with low insertion loss and fast response ,CHINESE PHYSICS LETTERS,JUN 2005,22 (6):1449-1451

Palavras-Chave #光电子学 #LOW-POWER CONSUMPTION
Tipo

期刊论文