A nanowire magnetic memory cell based on a periodic magnetic superlattice
Data(s) |
2005
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Resumo |
We analyse the operation of a semiconductor nanowire-based memory cell. Large changes in the nanowire conductance result when the magnetization of a periodic array of nanoscale magnetic gates, which comprise the other key component of the memory cell, is switched between distinct configurations by an external magnetic field. The resulting conductance change provides the basis for a robust memory effect, which can be implemented in a semiconductor structure compatible with conventional semiconductor integrated circuits. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Song, JF; Bird, JP; Ochiai, Y .A nanowire magnetic memory cell based on a periodic magnetic superlattice ,JOURNAL OF PHYSICS-CONDENSED MATTER,AUG 31 2005,17 (34):5263-5268 |
Palavras-Chave | #半导体器件 #TRANSPORT |
Tipo |
期刊论文 |