Electronic structure of self-assembled InAs quantum disks in an axial magnetic field and two-electron quantum-disk qubit


Autoria(s): Dong, QR; Li, SS; Niu, ZC; Feng, SL; Zheng, HZ
Data(s)

2004

Resumo

We have studied the single-electron and two-electron vertically assembled quantum disks in an axial magnetic field using the effective mass approximation. The electron interaction is treated accurately by the direct diagonalization of the Hamiltonian matrix. We calculate the six energy levels of the single-electron quantum disks and the two lowest energy levels of the two-electron quantum disks in an axial magnetic field. The change of the magnetic field strongly modifies the electronic structures as an effective potential, leading to the splitting of the levels and the crossings between the levels. The effect of the vertical alignment on the electronic structures is discussed. It is demonstrated that the switching of the ground-state spin exists between S=0 and S=1. The energy difference DeltaE between the lowest S=0 and S=1 states is shown as a function of the axial magnetic field. It is also found that the variation of the energy difference between the lowest S=0 and S=1 states in the strong-B S=0 state is fairly linear. Our results provide a possible realization for a qubit to be fabricated by current growth techniques. (C) 2004 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/7970

http://www.irgrid.ac.cn/handle/1471x/63579

Idioma(s)

英语

Fonte

Dong, QR; Li, SS; Niu, ZC; Feng, SL; Zheng, HZ .Electronic structure of self-assembled InAs quantum disks in an axial magnetic field and two-electron quantum-disk qubit ,JOURNAL OF APPLIED PHYSICS,SEP 15 2004,96 (6):3277-3281

Palavras-Chave #半导体物理 #DOT SYSTEMS
Tipo

期刊论文