Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface


Autoria(s): Wen C; Wang YM; Wan W; L, FH; Liang JW; Zou J
Data(s)

2009

Resumo

Misfit defects in a 3C-SiC/Si (001) interface were investigated using a 200 kV high-resolution electron microscope with a point resolution of 0.194 nm. The [110] high-resolution electron microscopic images that do not directly reflect the crystal structure were transformed into the structure map through image deconvolution. Based on this analysis, four types of misfit dislocations at the 3C-SiC/Si (001) interface were determined. In turn, the strain relaxation mechanism was clarified through the generation of grow-in perfect misfit dislocations (including 90 degrees Lomer dislocations and 60 degrees shuffle dislocations) and 90 partial dislocations associated with stacking faults. (C) 2009 American Institute of Physics. [doi:10.1063/1.3234380]

National Natural Science Foundation of China 50672124 Chinese High Technology Program 2006AA03A106 Australia Research Council DP0663304 DP0985084

Identificador

http://ir.semi.ac.cn/handle/172111/7579

http://www.irgrid.ac.cn/handle/1471x/63526

Idioma(s)

英语

Fonte

Wen, C (Wen, C.); Wang, YM (Wang, Y. M.); Wan, W (Wan, W.); Li, FH (Li, F. H.); Liang, JW (Liang, J. W.); Zou, J (Zou, J.) .Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface ,JOURNAL OF APPLIED PHYSICS,OCT 1 2009,106(7):Art.No.073522

Palavras-Chave #光电子学 #RESOLUTION ELECTRON-MICROSCOPY
Tipo

期刊论文