Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0.14 W.A(-1) and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication.

National Natural Science Foundation of China 90401025 60736036070600960777021National Basic Research Program of China 2006CB604901 2006CB604902 National Hi-Tech Research and Development Program of China 2006AA01Z256 2007AA03Z419 2007AA03Z417 Supported the National Natural Science Foundation of China under Grant Nos 90401025, 6073603, 60706009 and 60777021, the National Basic Research Program of China under Grant Nos 2006CB604901 and 2006CB604902, and the National Hi-Tech Research and Development Program of China under Grant Nos 2006AA01Z256, 2007AA03Z419 and 2007AA03Z417.