Electron spin quantum beats and room temperature g factor in GaAsN

We report on the investigation of electron spin quantum beats at room temperature in GaAsN thin films by time-resolved Kerr rotation technique. The measurement of the quantum beats, which originate from the Larmor precession of electron spins in external transverse magnetic field, yields an accurate determination of the conduction electron g factor. We show that the g factor of GaAs1-xNx thin films is significantly changed by the introduction of a small nitrogen fraction.

Chinese-French PRA National Science Foundation of China PRA MX06-07 1053403010774183National Basic Research Program of China 2006CB921300973 We acknowledge the financial support of this work from the Chinese-French PRA. Project No. PRA MX06-07 from National Science Foundation of China (Grant Nos. 10534030 and 10774183) and from National Basic Research Program of China (Grant No. 2006CB921300973)