Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods

Nanostructured hexagonal InN overlayers were heteroepitaxially deposited on vertically oriented c-axis GaN nanorods by metal-organic chemical vapor deposition. InN overlayers grown in radial directions are featured by a nonpolar heteroepitaxial growth mode on GaN nanorods, showing a great difference from the conventional InN growth on (0001) c-plane GaN template. The surface of InN overlayers is mainly composed of several specific facets with lower crystallographic indices. The orientation relationship between InN and GaN lattices is found to be [0001](InN) parallel to [0001](GaN) and [1100](InN)parallel to[1100](GaN). A strong photoluminescence of InN nanostructures is observed. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3177347]

National Natural Science Foundation of China 60506001 604760216057600360776047National Basic Research Program 2007CB936700 We are grateful to Qian Sun for his critical reading and helpful discussions. This work is supported by the National Natural Science Foundation of China (Grant Nos. 60506001 60476021 60576003 and 60776047) and National Basic Research Program (Contract No. 2007CB936700)