Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy

A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials. (C) 2009 Elsevier B.V. All rights reserved.

Nation Natural Science Foundation of China 50672079 6067602760837001National Basic Research Program of China (973 Program) 2007CB613404 MOST International Sci & Tech Cooperation and Exchange Special Fund 2008DFA51230 This work was supported by the Nation Natural Science Foundation of China under Grant nos. 50672079 60676027,and 60837001 and National Basic Research Program of China (973 Program) under Grant no. 2007CB613404 MOST International Sci & Tech Cooperation and Exchange Special Fund under Grant no. 2008DFA51230.