Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties
Data(s) |
2007
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Resumo |
On the metalorganic chemical vapour deposition growth of AlN, by adjusting H-2+N-2 mixture gas components, we can gradually control island dimension. During the Volmer - Weber growth, the 2-dimensional coalescence of the islands induces an intrinsic tensile stress. Then, this process can control the in-plane stress: with the N-2 content increasing from 0 to 3 slm, the in-plane stress gradually changes from 1.5 GPa tensile stress to - 1.2GPa compressive stress. Especially, with the 0.5 slm N-2 + 2.5 slm H-2 mixture gas, the in-plane stress is only 0.1 GPa, which is close to the complete relaxation state. Under this condition, this sample has good crystal and optical qualities. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Hu, WG ; Liu, XL ; Jiao, CM ; Wei, HY ; Kang, TT ; Zhang, PF ; Zhang, RQ ; Fan, HB ; Zhu, QS .Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2007 ,40(23): 7462-7466 |
Palavras-Chave | #半导体材料 #VAPOR-PHASE EPITAXY #WURTZITE-TYPE CRYSTALS #THIN-FILMS #ALUMINUM NITRIDE #INTRINSIC STRESS #GAN #SAPPHIRE #AIN #DEPOSITION #STRAIN |
Tipo |
期刊论文 |