Growth and characterization of high-quality LiAlO<inf>2</inf> single crystal


Autoria(s): Huang Taohua; 周圣明; Teng Hao; Lin Hui; Zou Jun; Zhou Jianhua; Wang Jun
Data(s)

2008

Resumo

g-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high-resolution X-ray diffraction and chemical etching. The results show that the as-grown crystal has perfect quality with the full width at half maximum (FWHM) of 17.7-22.6 arcsec and etch pits density of (0.3-2.2) x 10(4) cm(-2) throughout the crystal boule. The bottom of the crystal boule shows the best quality. The optical transmission spectra from UV to IR exhibits that the crystal is transparent from 0.2 to 5.5 mu m and becomes completely absorbing around 6.7 mu m wavelength. The optical absorption edge in near UV region is about 191 nm.

Identificador

http://ir.siom.ac.cn/handle/181231/6111

http://www.irgrid.ac.cn/handle/1471x/12530

Idioma(s)

英语

Fonte

Huang Taohua;周圣明;Teng Hao;Lin Hui;Zou Jun;Zhou Jianhua;Wang Jun .,J. Mater. Sci. Technol.,2008,24(2):145-148

Palavras-Chave #光学材料;晶体 #gamma-LiAlO2 crystal #Czochralski method #chemical etching #transmission spectra
Tipo

期刊论文