Growth and characterization of high-quality LiAlO<inf>2</inf> single crystal
Data(s) |
2008
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Resumo |
g-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high-resolution X-ray diffraction and chemical etching. The results show that the as-grown crystal has perfect quality with the full width at half maximum (FWHM) of 17.7-22.6 arcsec and etch pits density of (0.3-2.2) x 10(4) cm(-2) throughout the crystal boule. The bottom of the crystal boule shows the best quality. The optical transmission spectra from UV to IR exhibits that the crystal is transparent from 0.2 to 5.5 mu m and becomes completely absorbing around 6.7 mu m wavelength. The optical absorption edge in near UV region is about 191 nm. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Huang Taohua;周圣明;Teng Hao;Lin Hui;Zou Jun;Zhou Jianhua;Wang Jun .,J. Mater. Sci. Technol.,2008,24(2):145-148 |
Palavras-Chave | #光学材料;晶体 #gamma-LiAlO2 crystal #Czochralski method #chemical etching #transmission spectra |
Tipo |
期刊论文 |