Color centers and charge state change in Ce : YAG crystals grown by temperature gradient techniques


Autoria(s): 董永军; 周国清; Xu J; 赵广军; Su FL; 苏良碧; Li HJ; Si JL; Qian XB; Li XQ; Shen J
Data(s)

2006

Resumo

Color centers and impurity defects of Ce:YAG crystals grown in reduction atmosphere by temperature gradient techniques have been investigated by means of gamma irradiation and thermal treatments. Four absorption bands associated with color centers or impurity defects at 235, 255, 294 and 370 nm were observed in as-grown crystals. Changes in optical intensity of the 235 and 370 nm bands after gamma irradiation indicate that they are associated with F+-type color center. Charge state change processes of Fe3+ impurity and Ce3+ ions take place in the irradiation process. The variations of Ce3+ ions concentration clearly indicate that Ce4+ ions exist in Ce:YAG crystals and gamma irradiations could increase the concentration of Ce3+ ions. Annealing treatments and the changes in optical density suggest that a heterovalent impurity ion associated with the 294 nm band seems to be present in the crystals. (c) 2005 Elsevier B.V. All rights reserved.

Identificador

http://ir.siom.ac.cn/handle/181231/5643

http://www.irgrid.ac.cn/handle/1471x/12295

Idioma(s)

英语

Fonte

董永军;周国清;Xu J;赵广军;Su FL;苏良碧;Li HJ;Si JL;Qian XB;Li XQ;Shen J.,J. Cryst. Growth,2006,286(2):476-480

Palavras-Chave #光学材料;晶体 #defects #radiation #scintillator materials #yttrium compounds
Tipo

期刊论文