Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy
Data(s) |
01/06/2011
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Resumo |
We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/38209/1/Structural_and_optical.pdf Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Bhat, Thirumaleshwara N and Sinha, Neeraj and Krupanidhi, SB (2011) Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. In: Scripta Materialia, 65 (1). pp. 33-36. |
Publicador |
Elsevier Science |
Relação |
http://dx.doi.org/10.1016/j.scriptamat.2011.03.017 http://eprints.iisc.ernet.in/38209/ |
Palavras-Chave | #Materials Research Centre |
Tipo |
Journal Article PeerReviewed |