Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications
Data(s) |
1979
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Resumo |
The short‐circuit current density (Jsc) of indium tin oxide (ITO/silicon solar cells has been shown both theoretically and experimentally to be a function of the thickness of the ion beam sputtered ITO layer. These results can be accounted for by computing the optical reflection from the ITO/silicon interface. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/34512/1/Antireflection.pdf Cheek, G and Genis, A and DuBow, JB and Verneker, Pai VR (1979) Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications. In: Applied Physics Letters, 35 (7). pp. 495-497. |
Publicador |
American Institute of Physics |
Relação |
http://apl.aip.org/resource/1/applab/v35/i7/p495_s1 http://eprints.iisc.ernet.in/34512/ |
Palavras-Chave | #Inorganic & Physical Chemistry |
Tipo |
Journal Article PeerReviewed |