Electron-hole recombination in cobalt-doped p-type germanium


Autoria(s): Susila, G; Suryan, G
Data(s)

1971

Resumo

The recombination properties of cobalt centers in p-type germanium containing cobalt in the concentration range 1014 to 1016 atoms/cm3 have been investigated. The measurement of lifetime has been carried out by steady-state photoconductivity and photo-magneto-electric methods in the temperature range 145 to 300°K. The cross-sections Sno (electron capture cross-section at neutral centers). Sn- (electron capture cross-section at singly negatively charged centers) and their temperature variations have been estimated by the analysis of the lifetime data on the basis of Sah-Shockley's multi-level formula. The value of Sno is (15±5).10-16 cm2 and is temperature independent. The value of Sn- is ≈4·10-16 cm2 around 225°K and it increases with increase of temperature. The possible mechanisms for capture at neutral and repulsive centers are discussed and a summary of the capture cross-sections for cobalt centers is given. A comparison of the cross-section values of cobalt and their temperature variations with those of the related impurities-manganese, iron and nickel-in germanium has been made.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/28301/1/electron.pdf

Susila, G and Suryan, G (1971) Electron-hole recombination in cobalt-doped p-type germanium. In: Journal of Physics and Chemistry of Solids, 32 (7). pp. 1463-1470.

Publicador

Elsevier B.V

Relação

http://dx.doi.org/10.1016/S0022-3697(71)80042-2

http://eprints.iisc.ernet.in/28301/

Palavras-Chave #Physics
Tipo

Journal Article

PeerReviewed