Enhanced dielectric response of ZrO2 upon Ti doping and introduction of O vacancies
Data(s) |
01/01/2008
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Resumo |
We determine the electronic properties and dielectric response of zirconia (ZrO2) with oxygen vacancies (O vacancies) and Ti doping using first-principles density functional theory calculations based on pseudopotentials and a plane wave basis. We find significantly enhanced static dielectric response in zirconia with Ti doping and introduction of oxygen vacancies. Softening of phonon modes are responsible for the enhanced dielectric response of doped samples compared to pure zirconia. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/26290/1/34.pdf Dutta, Gargi and Hembram, KPSS and Rao, G Mohan and Waghmare, Umesh V (2008) Enhanced dielectric response of ZrO2 upon Ti doping and introduction of O vacancies. In: Journal of Applied Physics, 103 (1). |
Publicador |
American Institute of Physics |
Relação |
http://jap.aip.org/japiau/v103/i1/p016102_s1 http://eprints.iisc.ernet.in/26290/ |
Palavras-Chave | #Instrumentation and Applied Physics (Formally ISU) |
Tipo |
Journal Article PeerReviewed |