Investigation of Deep Defects Due to -Particle Irradiation in n-Silicon
Data(s) |
16/02/1986
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Resumo |
Electrical properties of deep defects induced in n-silicon by -particles of about 10 MeV energy at a dose of 1014 and 1015 cm-2 are studied by DLTS. The levels at Ec -0.18 eV, Ec -0.26 eV, and Ec -0.48 eV are identified as A center, V2 (=/-) and V2 (-/0) on the basis of activation energy, electron capture cross section, and annealing behavior. Two other irradiation related levels at Ec -0.28 eV and Ec -0.51 eV could not be related to any known center. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/22207/1/fulltext.pdf Indusekhar, H and Kumaran, V and Sengupta, D (1986) Investigation of Deep Defects Due to -Particle Irradiation in n-Silicon. In: Physica Status Solidi A, 93 (2). pp. 645-653. |
Publicador |
John Wiley and Sons |
Relação |
http://www3.interscience.wiley.com/journal/112445519/abstract http://eprints.iisc.ernet.in/22207/ |
Palavras-Chave | #Materials Research Centre #Physics |
Tipo |
Journal Article PeerReviewed |