Controlled electronic transport in single-walled carbon nanotube networks : selecting electron hopping and chemical doping mechanisms
Data(s) |
2010
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Resumo |
The electronic transport in both intrinsic and acid-treated single-walled carbon nanotube networks containing more than 90% semiconducting nanotubes is investigated using temperature-dependent resistance measurements. The semiconducting behavior observed in the intrinsic network is attributed to the three-dimensional electron hopping mechanism. In contrast, the chemical doping mechanism in the acid-treated network is found to be responsible for the revealed metal-like linear resistivity dependence in a broad temperature range. This effective method to control the electrical conductivity of single-walled carbon nanotube networks is promising for future nanoscale electronics, thermometry, and bolometry. © 2010 American Institute of Physics. |
Identificador | |
Publicador |
American Institute of Physics |
Relação |
DOI:10.1063/1.3449118 Han, Z. J. & Ostrikov, Kostya (2010) Controlled electronic transport in single-walled carbon nanotube networks : selecting electron hopping and chemical doping mechanisms. Applied Physics Letters, 96(23), p. 233115. |
Direitos |
Copyright 2010 American Institute of Physics |
Fonte |
School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty |
Tipo |
Journal Article |