Reverse biased Schottky contact hydrogen sensors based on Pt∕nanostructured ZnO∕SiC
| Data(s) |
2009
|
|---|---|
| Resumo |
Pt/nanostructured ZnO/SiC Schottky contact devices were fabricated and characterized for hydrogen gas sensing. These devices were investigated in reverse bias due to greater sensitivity, which attributes to the application of nanostructured ZnO. The current-voltage (I-V) characteristics of these devices were measured in different hydrogen concentrations. Effective change in the barrier height for 1% hydrogen was calculated as 27.06 meV at 620°C. The dynamic response of the sensors was also investigated and a voltage shift of 325 mV was recorded at 620°C during exposure to 1% hydrogen in synthetic air. |
| Formato |
application/pdf |
| Identificador | |
| Publicador |
American Institute of Physics |
| Relação |
http://eprints.qut.edu.au/59607/1/AIP_proceeding%28ISOEN_Conf%29_M_Shafiei_2009.pdf DOI:10.1063/1.3156546 Shafiei, Mahnaz, Yu, Jerry, Arsat, Rashidah, Kalantar-zadeh, Kourosh, Comini, Elisabetta , Ferroni, Matteo, Sberveglieri, Giorgio , & Wlodarski, Wojtek (2009) Reverse biased Schottky contact hydrogen sensors based on Pt∕nanostructured ZnO∕SiC. In AIP Conference Proceedings, American Institute of Physics , Brescia, Italy, pp. 353-356. |
| Direitos |
Copyright 2009 American Institute of Physics. |
| Fonte |
School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty |
| Palavras-Chave | #030107 Sensor Technology (Chemical aspects) #100708 Nanomaterials #100712 Nanoscale Characterisation #Gas Sensors #Hydrogen #ZnO #Schottky Diode #Reverse Bias |
| Tipo |
Conference Paper |
