Electronic transport properties of hot-pressed B6Si
| Contribuinte(s) |
Aselage, T. Emin, D. Woods, C. |
|---|---|
| Data(s) |
01/01/1987
|
| Resumo |
Measurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300K to -1300K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior. |
| Identificador | |
| Publicador |
Cambridge University Press |
| Relação |
DOI:10.1557/PROC-97-33 Wood, C., Emin, D., Feigelson, R.S., & Mackinnon, I.D.R. (1987) Electronic transport properties of hot-pressed B6Si. In Aselage, T., Emin, D., & Woods, C. (Eds.) Novel Refractory Semiconductors, Cambridge University Press, Anaheim CA, pp. 33-38. |
| Fonte |
Institute for Future Environments |
| Palavras-Chave | #091203 Compound Semiconductors #electrical conductivity #Seebeck coefficient #Hall mobility #electron microscopy #boron silicide |
| Tipo |
Conference Paper |
